BS, Electrical Engineering, Seoul National University
Ph. D, Electrical Engineering, Seoul National University

Samsung Electronics Semiconductor lab (2019.3~ 2021.2)
An assistant professor of electronic engineering at Gangneung-Wonju National University (2021.3~2024.08 )

positive Feedback FET 등의 차세대 반도체 소자 기반의 뉴런 회로
비휘발성 메모리 기반의 synaptic device
DRAM cell transistor 성능 개선
2D material 기반의 gas sensor

◾ Junhyeong Lee, and Min-Woo Kwon. "Positive feedback field effect transistor based on vertical NAND flash structure for in-memory computing." Japanese Journal of Applied Physics (2023).
◾ Chang Young Lim, Yeon Seok Kim, and Min-Woo Kwon. "Analysis of Row Hammer Based on Interfacial Trap of BCAT Structure in DRAM." Journal of IKEEE 27.3 (2023): 220-224.
◾ DongJun Jang, and Min-Woo Kwon. "Self-Rectifying Resistive Switching Memory Based on Molybdenum Disulfide for Reduction of Leakage Current in Synapse Arrays." Electronics 12.22 (2023): 4650.
◾ Junhyeong Lee, Misun Cha, and Min-Woo Kwon. "Charge Trap Flash structure with Feedback Field Effect Transistor for Processing in Memory." JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE 23.5 (2023): 295-302.
◾ DongJun Jang, U Jin Jo, Youhyeong Jeon, TaeYong Lee, RyangHa Kim, YoungLae Kim, and Min-Woo Kwon. "Resistive Hydrogen Detection Sensors based on 2 Dimensions–Molybdenum Disulfide Decorated by Palladium Nanoparticles." JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE 23.5 (2023): 258-264.
◾ U Jin Jo, DongJun Jang, Youhyeong Jeon, Taeha Kim, YoungLae Kim, and Min-Woo Kwon. "A Palladium-Deposited Molybdenum Disulfide-Based Hydrogen Sensor at Room Temperature." Applied Sciences 13.19 (2023): 10594.
◾ Yeon-Seok Kim, Chang-Young Lim, and Min-Woo Kwon. "Reduction of the Pass Gate Effect with a Spherical Shallow Trench Isolation in the BCAT Structure." JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE 23.4 (2023): 236-242.
◾ Yeon-Seok Kim, Chang-Young Lim, and Min-Woo Kwon. "Spherical Shallow Trench Isolation with silicon nitride layer in Buried Gate DRAM for reducing pass gate disturbance." 2023 Silicon Nanoelectronics Workshop (SNW). IEEE, 2023.
◾ Junhyeong Lee, Misun Cha, and Min-Woo Kwon. "Capacitor-Less Low-Power Neuron Circuit with Multi-Gate Feedback Field Effect Transistor." Applied Sciences 13.4 (2023): 2628.
◾ DongJun Jang, Beomso Jo, YoungLae Kim, and Min-Woo Kwon. "ReRAM Switching Performance based on Single-Walled Carbon Nanotubes Wire Electrode." 2023 International Conference on Electronics, Information, and Communication (ICEIC). IEEE, 2023.
◾ Chang Young Lim, and Min-Woo Kwon. "Multi-gate BCAT Structure and Select Word-line Driver in DRAM for Reduction of GIDL." JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE 22.6 (2022): 452-458.
◾ DongJun Jang, HyunWoo Ryu, HyeonJin Cha, Na-young Lee, YoungLae Kim, and Min-Woo Kwon. "Synaptic Device based on Resistive Switching Memory using Single-walled Carbon Nanotubes." JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE 22.5 (2022): 346-352.
◾Min-Woo Kwon, Kyungchul Park, and Byung-Gook Park. "Low-Power Adaptive Integrate-and-Fire Neuron Circuit Using Positive Feedback FET Co-Integrated With CMOS." IEEE Access 9 (2021): 159925-159932.
◾Min-Woo Kwon, Kyungchul Park, Myung-Hyun Baek, Junil Lee, and Byung-Gook Park, "A Low-Energy High-Density Capacitor-Less I&F Neuron Circuit Using Feedback FET Co-Integrated With CMOS," Journal of the Electron Devices Society, Vol. 7, no. 1, pp. 1080-1084, Sep. 2019
◾ Min-Woo Kwon, Myung-Hyun Baek, Sungmin Hwang, Kyungchul Park, Tejin Jang, Taehyung Kim, Junil Lee, Seongjae Cho, and Byung-Gook Park, “Integrate-and-fire neuron circuit using positive feedback field effect transistor for low power operation,” Journal of applied physics, Vol. 124, pp. 152107, Sep. 2018