학력
BS, Electrical Engineering, Seoul National University
Ph. D, Electrical Engineering, Seoul National University
주요 경력
Samsung Electronics Semiconductor lab (2019.3~ 2021.2)
An assistant professor of electronic engineering at Gangneung-Wonju National University (2021.3~2024.08 )
연구 분야
positive Feedback FET 등의 차세대 반도체 소자 기반의 뉴런 회로
비휘발성 메모리 기반의 synaptic device
DRAM cell transistor 성능 개선
2D material 기반의 gas sensor
주요논문 및 저서
◾ Junhyeong Lee, and Min-Woo Kwon. "Positive feedback field effect transistor based on vertical NAND flash structure for in-memory computing." Japanese Journal of Applied Physics (2023).
◾ Chang Young Lim, Yeon Seok Kim, and Min-Woo Kwon. "Analysis of Row Hammer Based on Interfacial Trap of BCAT Structure in DRAM." Journal of IKEEE 27.3 (2023): 220-224.
◾ DongJun Jang, and Min-Woo Kwon. "Self-Rectifying Resistive Switching Memory Based on Molybdenum Disulfide for Reduction of Leakage Current in Synapse Arrays." Electronics 12.22 (2023): 4650.
◾ Junhyeong Lee, Misun Cha, and Min-Woo Kwon. "Charge Trap Flash structure with Feedback Field Effect Transistor for Processing in Memory." JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE 23.5 (2023): 295-302.
◾ DongJun Jang, U Jin Jo, Youhyeong Jeon, TaeYong Lee, RyangHa Kim, YoungLae Kim, and Min-Woo Kwon. "Resistive Hydrogen Detection Sensors based on 2 Dimensions–Molybdenum Disulfide Decorated by Palladium Nanoparticles." JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE 23.5 (2023): 258-264.
◾ U Jin Jo, DongJun Jang, Youhyeong Jeon, Taeha Kim, YoungLae Kim, and Min-Woo Kwon. "A Palladium-Deposited Molybdenum Disulfide-Based Hydrogen Sensor at Room Temperature." Applied Sciences 13.19 (2023): 10594.
◾ Yeon-Seok Kim, Chang-Young Lim, and Min-Woo Kwon. "Reduction of the Pass Gate Effect with a Spherical Shallow Trench Isolation in the BCAT Structure." JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE 23.4 (2023): 236-242.
◾ Yeon-Seok Kim, Chang-Young Lim, and Min-Woo Kwon. "Spherical Shallow Trench Isolation with silicon nitride layer in Buried Gate DRAM for reducing pass gate disturbance." 2023 Silicon Nanoelectronics Workshop (SNW). IEEE, 2023.
◾ Junhyeong Lee, Misun Cha, and Min-Woo Kwon. "Capacitor-Less Low-Power Neuron Circuit with Multi-Gate Feedback Field Effect Transistor." Applied Sciences 13.4 (2023): 2628.
◾ DongJun Jang, Beomso Jo, YoungLae Kim, and Min-Woo Kwon. "ReRAM Switching Performance based on Single-Walled Carbon Nanotubes Wire Electrode." 2023 International Conference on Electronics, Information, and Communication (ICEIC). IEEE, 2023.
◾ Chang Young Lim, and Min-Woo Kwon. "Multi-gate BCAT Structure and Select Word-line Driver in DRAM for Reduction of GIDL." JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE 22.6 (2022): 452-458.
◾ DongJun Jang, HyunWoo Ryu, HyeonJin Cha, Na-young Lee, YoungLae Kim, and Min-Woo Kwon. "Synaptic Device based on Resistive Switching Memory using Single-walled Carbon Nanotubes." JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE 22.5 (2022): 346-352.
◾Min-Woo Kwon, Kyungchul Park, and Byung-Gook Park. "Low-Power Adaptive Integrate-and-Fire Neuron Circuit Using Positive Feedback FET Co-Integrated With CMOS." IEEE Access 9 (2021): 159925-159932.
◾Min-Woo Kwon, Kyungchul Park, Myung-Hyun Baek, Junil Lee, and Byung-Gook Park, "A Low-Energy High-Density Capacitor-Less I&F Neuron Circuit Using Feedback FET Co-Integrated With CMOS," Journal of the Electron Devices Society, Vol. 7, no. 1, pp. 1080-1084, Sep. 2019
◾ Min-Woo Kwon, Myung-Hyun Baek, Sungmin Hwang, Kyungchul Park, Tejin Jang, Taehyung Kim, Junil Lee, Seongjae Cho, and Byung-Gook Park, “Integrate-and-fire neuron circuit using positive feedback field effect transistor for low power operation,” Journal of applied physics, Vol. 124, pp. 152107, Sep. 2018
저널 논문
◾ In-memory computation using positive feedback field effect transistor array based on charge trap layer for Boolean logic, JAPANESE JOURNAL OF APPLIED PHYSICS, vol.65 No.1, 2026권민우
◾ Room Temperature Hydrogen Gas Sensor Based on Pd-SnO2 Nanomaterials with Electro-spinning, Journal of semiconductor technology and science, vol.25 No.6 pp.704~711, 2025권민우
◾ Implementation of Boolean Logic Operations and Refresh Circuit for 2T DRAM-Based PIM Architecture, ELECTRONICS, vol.14 No.22, 2025권민우
◾ Integration of Neuronal Excitatory and Inhibitory Functions in a Neuron Circuit Using Positive Feedback Field Effect Transistor, JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, vol.25 No.2 pp.109~116, 2025권민우
◾ Development of In-Memory Computing Device Using Positive Feedback Field Effect Transistor Based on NAND Flash Array, IEEE ACCESS, vol.13 pp.45449~45457, 2025권민우
◾ Analysis of the Switching Mechanism of Hafnium Oxide Layer with Nanoporous Structure by RF Sputtering, JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, vol.25 No.1 pp.9~13, 2025권민우
◾ Analysis of Electrical Characteristics Changes Due to Physical Parameter Variations in Dual-Gate Feedback Field Effect Transistor, JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, vol.25 No.1 pp.1~8, 2025권민우
◾ Mitigation of 1-Row Hammer in BCAT Structures Through Buried Oxide Integration and Investigation of Inter-Cell Disturbances, ELECTRONICS, vol.13 No.24, 2024권민우
◾ Mitigating Pass Gate Effect in Buried Channel Array Transistors Through Buried Oxide Integration: Addressing Interference Phenomenon Between Word Lines, APPLIED SCIENCES-BASEL, vol.14 No.22, 2024권민우
◾ Enhancing Accuracy of Nanocomposite Hydrogen Sensors in Various Environmental Situations through Machine Learning, Journal of Semiconductor Technology and Science, vol.24 No.5 pp.393~398, 2024권민우
학술대회
◾ 염현준, 권민우, 불 연산용 전하 트랩 층을 적용한 양성 피드백 전계효과 트랜지스터 어레이 기반 인-메모리 컴퓨팅 구조, IEIE 추계학술대회, 대한민국, 곤지암리조트, 2025권민우
◾ 염현준, 권민우, In-Memory Computation Using Positive Feedback Field Effect Transistor Array Based on Charge Trap Layer for Boolean Logic Operations, International Conference on Solid State Devices and Materials 2025 (SSDM 2025), 일본, 요코하마, 2025권민우
◾ 전휘찬, 권민우, Work Function Engineering in Dual Metal BCAT DRAM for Simultaneous Mitigating GIDL, GIJL, PGE and 1-RD, International Conference on Solid State Devices and Materials 2025 (SSDM 2025), 일본, 요코하마, 2025권민우
◾ 이재원, 권민우, Circuit-Level Compact Modeling of a Dual-Gate Feedback Field-Effect Transistor with Charge-Trap Flash Layer, 2025 전자·반도체·인공지능 학술대회, 강릉원주대학교, 2025권민우
◾ 염현준, 권민우, 전하 트랩층 기반 피드백 전계효과 트랜지스터 어레이를 이용한 인메모리 XOR 연산 소자 구조 연구, 2025 전자·반도체·인공지능 학술대회, 강릉원주대학교, 2025권민우
◾ 김다민, 염현준, 권민우, "Implementation of Read and Write Operationsina Processing-in-Memory Device Based on Positive Feedback Transistors", 2025 전자·반도체·인공지능 학술대회, 대한민국, 강릉원주대학교, 2025권민우
◾ 전휘찬, 권민우, "Work Function Engineering of Dual Metal BCAT DRAM for Mitigating Pass Gate Effect and 1-Raw Disturb", 2025 전자·반도체·인공지능 학술대회, 대한민국, 강릉원주대학교, 2025권민우
◾ 이수빈, 전휘찬, 권민우, "Work Function Engineering in Dual Metal BCAT DRAM for Optimization of Gate-Induced Leakage Currents", 2025 전자·반도체·인공지능 학술대회, 대한민국, 강릉원주대학교, 2025권민우
◾ 박민선, 정항욱(국립강릉원주대학교), 권민우(서울과학기술대학교), NAND Flash Array 기반 Positive Feedback FET를이용한인메모리컴퓨팅소자개발, 대한전자공학회 추계학술대회, 하이원리조트, 2024권민우
수상
◾ Compact Modeling of a Dual-Gate Feedback Field-Effect Transistor for Low-Power Circuits and PIM Applications, Best student paper bronze award, 2025 IEEE Seoul Section Student Paper Contest, 2025권민우
◾ charge trap flash structure with feedback field effect transistor for processing in memory, 해동 우수논문상, 대한전자공학회, 2025권민우
전자공학과
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